WebNBTI and PBTI create a decrease in drain-to-source current and an increase in propagation delay. Threshold voltage is an important parameter due to exponential dependence on delay and leakage power. Threshold voltage variations produce adverse effects on operation frequency. These phenomena accrue in pull-up/pull-down transistors in stack WebNBTI（えぬびーてぃーあい）とは、（英語: Negative Bias Temperature Instability : 負バイアス温度不安定性）の略で、P型半導体(PMOS)の劣化メカニズムのひとつ。古くはスロートラップ現象と呼ばれていた。1990年代はじめに観測された現象で、加工プロセスの微細化に伴い顕在化している。

Tetsu Kimura

Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time. It is of immediate concern in p-channel MOS devices (pMOS), since they almost always operate with negative gate-to-source voltage; however, the very sam… WebNegative Bias Temperature Instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBTI degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction-Diffusion model in a particularly simple ... gcc school code

负偏置温度不稳定性 - 维基百科，自由的百科全书

WebNb-Ti合 金も初期にはTi濃 度の高いNb-65%Ti合 金 が用いられたが(4)～(6),や はり加工性と臨界特性に問題 があり,現 在では低Ti濃 度の合金が使用されている . すなわち,ア メリ … WebKoba Lab Official Page＜小林春夫研究室公式ホームページ＞ WebNBTI-specific interface trap generation at the Si/ SiO 2 interface. Since hydrogen diffusion through poly-silicon is faster than that in oxide, scaling of gate oxides has increased NBTI susceptibilities [16]. (e) The introduction of nitrogen to reduce gate leakage and to inhibit boron penetration in thin oxide de-vices has made NBTI worse [10]. gccs architecture